The NGTG40N120FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance switching applications. It features a Field Stop II Trench construction that enhances efficiency, providing low on-state voltage and minimal switching losses. The device is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 80 A, with a pulsed collector current capability of 200 A. This IGBT is optimized for high-speed switching, making it suitable for applications such as solar inverters and uninterruptible power supplies (UPS). It has a maximum junction temperature of 175¬8C and offers a short circuit withstand time of 10 ¬µs. The device is packaged in a TO-247 case and is Pb-free, complying with RoHS standards. With a power dissipation rating of 535 W at 25¬8C and a thermal resistance of 0.28¬8C/W from junction to case, the NGTG40N120FL2WG is a robust choice for demanding environments. Its switching energy losses are rated at 3.4 mJ for turn-on and 1.1 mJ for turn-off, indicating efficient performance in dynamic applications.
IGBT Trench Field Stop 1200V 80A 535W Through Hole TO-247-3
Manufacturer: onsemi
Win Source Part Number: 1324950-NGTG40N120FL
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 535 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Switching Energy: 3.4mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 313 nC
Td (on/off) @ 25°C: 116ns/286ns
Test Condition: 600V, 40A, 10Ohm, 15V
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 2156-NGTG40N120FL2WG
Base Product Number: NGTG40
Product Status: Obsolete
RoHS Status: ROHS3 Compliant
IGBT, 1200V 40A SOLAR/UPS, 30-TUBE Product overview: NGTG40N120FL2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTG40N120FL2WG can be used for catalog matching and distributor lookup.
IGBT 1200V 40A TO-247
IGBT, SINGLE, N CHANNEL, 1.2KV, 80A, TO-247-3; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2V; Power Dissipation:535W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°CRoHS Compliant: Yes
IGBT Transistors 1200V/40A FAST IGBT FSII
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGTG40N120FL2WG-ND | 1324950-NGTG40N120FL2WG | NGTG40N120FL2WG | 279-NGTG40N120FL2WG | NGTG40N120FL2WG | 68X4273 | NGTG40N120FL2WG |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | 1200V 40A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, N Channel, 1.2Kv, 80A, To-247-3; Continuous Collector Current Onsemi | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | |
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | |||
| Packing Method | Tube | Tube; Tube | Tube; Tube | ||||
| Structure | Trench Field Stop |
