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onsemi Single IGBTs NGTG35N65FL2WG

Description
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 300 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Single Length = 16.26mm
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Suppliers

Company
Product
Description
Supplier Links
 - 9008817 - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 300 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Single Length = 16.26mm

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 70 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 300 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.26mm

Supplier's Site
 - 9008817P - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 300 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Single Length = 16.26mm Delivery on production packaging - Tube. This product is non-returnable.

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 70 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 300 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.26mm
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 1453244 - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 300 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Single Length = 16.26mm

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 70 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 300 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.26mm

Supplier's Site
Single IGBTs - NGTG35N65FL2WGOS-ND - DigiKey
Thief River Falls, MN, United States
IGBT Field Stop 650V 70A 300W Through Hole TO-247-3

IGBT Field Stop 650V 70A 300W Through Hole TO-247-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
NGTG35N65FL2WG
IGBT Transistors NGTG35N65FL2WG
IGBT Transistors 650V/35A FAST IGBT FSII T

IGBT Transistors 650V/35A FAST IGBT FSII T

Supplier's Site Datasheet
 - NGTG35N65FL2WG - Rochester Electronics
Newburyport, MA, United States
NGTG35N65FL2 - Insulated Gate Bipolar Transistor

NGTG35N65FL2 - Insulated Gate Bipolar Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - NGTG35N65FL2WG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
NGTG35N65FL2WG
Discrete Semiconductor Products - Transistors - IGBTs NGTG35N65FL2WG
IGBT FIELD STOP 650V 70A TO247-3

IGBT FIELD STOP 650V 70A TO247-3

Supplier's Site

Technical Specifications

  RS Components, Ltd. DigiKey VAST STOCK CO., LIMITED Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Bipolar RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number 9008817 NGTG35N65FL2WGOS-ND NGTG35N65FL2WG NGTG35N65FL2WG NGTG35N65FL2WG
Product Name Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel
IC(max) 70 amps
PD 300000 milliwatts
Package Type TO-247; TO-247 TO-247; TO-247-3 SOT-93 (T0-218) 4
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