onsemi Single IGBTs NGTB50N65FL2WG

IGBT Trench Field Stop 650V 100A 417W Through Hole TO-247-3

Manufacturer: ON Semiconductor
Win Source Part Number: 805336-NGTB50N65FL2WG
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 417W
Reverse Recovery Time (trr): 94ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 200A
Switching Energy: 1.5mJ (on), 460μJ (off)
Input Type: Standard
Gate Charge: 220nC
Test Condition: 400V, 50A, 10Ohm, 15V
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 100A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 50A
Td (on/off) at 25°C: 100ns/237ns

IGBT, 650V 50A FS2 Solar/UPS, 30-TUBE Product overview: NGTB50N65FL2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB50N65FL2WG can be used for catalog matching and distributor lookup.