IGBT, 600 V, 50 A, FS1 Solar/UPS, TO-247, 30-TUBE Product overview: NGTB50N60FLWG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 50 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 50 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB50N60FLWG can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 209164-NGTB50N60FLWG
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 85ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 310nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 100A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 223W
Pulsed Collector Current: 200A
Collector-emitter saturation voltage(Max): 1.9V @ 15V, 50A
Total Switching Energy(Ets): 1.1mJ (on), 600μJ (off)
Turn-on and Turn-off delay time: 116ns/292ns
Testing Conditions: 400V, 50A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Application Field: Used in Alternative Energy, Power Management, Maintenance & Repair
Quantity per package: 30
IGBT Trench Field Stop 600V 100A 223W Through Hole TO-247-3
IGBT 600V 50A TO247
ON SEMICONDUCTOR NGTB50N60FLWG IGBT, 600V, 50A, TO-247-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-NGTB50N60FLWG | 209164-NGTB50N60FLWG | NGTB50N60FLWGOS-ND | NGTB50N60FLWG | 598-NGTB50N60FLWG |
| Product Name | 600 V 50 A IGBT Transistor | IGBTs - Single - NGTB50N60FLWG | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | ON SEMICONDUCTOR NGTB50N60FLWG IGBT, 600V, 50A, TO-247-3 |
| PD | 223000 milliwatts | 223000 milliwatts | 223000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| VCE(on) | 1.9 volts | 1.65 volts | |||
| Package Type | TO-247; SOT3; TO-247 | TO-247; TO-247-3 |
