IGBT, 1200V 50A FS2 Solar/UPS, TO-247, 30-TUBE Product overview: NGTB50N120FL2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB50N120FL2WG can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247
Manufacturer: ON Semiconductor
Win Source Part Number: 887244-NGTB50N120FL2
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 1200 V 100 A 535 W Through Hole TO-247
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: NGTB50
Categories: Discrete Semiconductor Products
Case / Package: TO-247
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Limited
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
IGBT 1200V 100A 535W TO247
TRANSISTOR, IGBT, 2.2V, 100A, TO-247-3; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:535W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of RoHS Compliant: Yes
IGBT, SINGLE, 1.2KV, 100A, TO-247; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:535W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:- RoHS Compliant: Yes
IGBT 1200V 100A 535W TO247
IGBT Transistors 1200V/50A FAST IGBT FSII
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-NGTB50N120FL2WG | NGTB50N120FL2WGOS-ND | 887244-NGTB50N120FL2WG | NGTB50N120FL2WG | 12AC6555 | 28X8013 | NGTB50N120FL2WG | NGTB50N120FL2WG |
| Product Name | 1200V 50A IGBT Transistor | Single IGBTs | IGBTs - Single - NGTB50N120FL2WG | Single IGBTs | Transistor, Igbt, 2.2V, 100A, To-247-3; Dc Collector Current Onsemi | Igbt, Single, 1.2Kv, 100A, To-247; Continuous Collector Current Onsemi | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| PD | 535000 milliwatts | 535000 milliwatts | 535000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | TO-247; TO-247-3 | TO-3; TO-247 | TO-3; TO-247 |
