onsemi IGBTs - Single - NGTB45N60S2WG NGTB45N60S2WG

Manufacturer: ON Semiconductor
Win Source Part Number: 1231161-NGTB45N60S2WG
Manufacturer Homepage: www.onsemi.com
Alternative Parts (Cross-Reference): STGW45NC60WD; IXGH50N60C4D1; IXGH50N60C4; NGTB45N60S2WG;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

IGBT

IGBT 45A 600V TO-247

NGTB45N60S2 - Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 90 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 300 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 90 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 300 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 90 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 300 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single