IGBT TRENCH/FS 650V 80A TO247
IGBT, 650V 40A FS2 Solar/UPS, 30-TUBE Product overview: NGTB40N65FL2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB40N65FL2WG can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 80A 366W Through Hole TO-247-3
Manufacturer: ON Semiconductor
Win Source Part Number: 1231160-NGTB40N65FL2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 366W
Reverse Recovery Time (trr): 72ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 160A
Switching Energy: 970μJ (on), 440μJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 84ns/177ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Family Name: NGTB40N65FL2W
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 40A
Alternative Parts (Cross-Reference): STGW60H65FB; STGW40H65DFB; IKW30N65NL5XKSA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
IGBT,Field Stop II,650V,40A,diode,TO
IGBT,Field Stop II,650V,40A,diode,TO
IGBT,Field Stop II,650V,40A,diode,TO
IGBT SINGLE TRANSISTOR, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IGBT Single Transistor, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 RoHS Compliant: Yes
IGBT TRENCH/FS 650V 80A TO247
IGBT Transistors 650V/40A FAST IGBT FSII T
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGTB40N65FL2WG | 279-NGTB40N65FL2WG | NGTB40N65FL2WGOS-ND | 1231160-NGTB40N65FL2WG | 8427905 | 8427905P | 135809098 | 31Y3222 | NGTB40N65FL2WG | NGTB40N65FL2WG |
| Product Name | Single IGBTs | 650V 40A IGBT Transistor | Single IGBTs | IGBTs - Single - NGTB40N65FL2WG | IGBTs | IGBTs | IGBT | Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; To-247 | TO-247; TO-247 | TO-3; TO-247 | ||||
| PD | 366000 milliwatts | |||||||||
| Packing Method | Tube | Tube; Tube | Tube; Tube |
