onsemi Discrete Semiconductor Products - Transistors - IGBTs - Single NGTB40N60L2WG

Description
Win Source Part Number: 1082082-NGTB40N60L2W G Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 30 Power - Max: 417 W Reverse Recovery Time (trr): 73 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A Switching Energy: 1.17mJ (on), 280µJ (off) Input Type: Standard Gate Charge: 228 nC Td (on/off) @ 25°C: 98ns/213ns Test Condition: 400V, 40A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): FGH40N60SMDF; NGTB45N60S1WG; STGW60V60DF; STGWA45HF60WDI; NGTB35N60FL2WG; STGW39NC60VD; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NGTB40N60L2WGOS,2156 -NGTB40N60L2WG-OS,ON SONSNGTB40N60L2WG,28 32-NGTB40N60L2WG-488 ,2832-NGTB40N60L2WG Base Product Number: NGTB40 Product Status: Obsolete
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Description
Win Source Part Number: 1082082-NGTB40N60L2W G Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 30 Power - Max: 417 W Reverse Recovery Time (trr): 73 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A Switching Energy: 1.17mJ (on), 280µJ (off) Input Type: Standard Gate Charge: 228 nC Td (on/off) @ 25°C: 98ns/213ns Test Condition: 400V, 40A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): FGH40N60SMDF; NGTB45N60S1WG; STGW60V60DF; STGWA45HF60WDI; NGTB35N60FL2WG; STGW39NC60VD; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NGTB40N60L2WGOS,2156 -NGTB40N60L2WG-OS,ON SONSNGTB40N60L2WG,28 32-NGTB40N60L2WG-488 ,2832-NGTB40N60L2WG Base Product Number: NGTB40 Product Status: Obsolete
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1082082-NGTB40N60L2WG - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1082082-NGTB40N60L2WG
Discrete Semiconductor Products - Transistors - IGBTs - Single 1082082-NGTB40N60L2WG
Win Source Part Number: 1082082-NGTB40N60L2W G Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 30 Power - Max: 417 W Reverse Recovery Time (trr): 73 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A Switching Energy: 1.17mJ (on), 280µJ (off) Input Type: Standard Gate Charge: 228 nC Td (on/off) @ 25°C: 98ns/213ns Test Condition: 400V, 40A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): FGH40N60SMDF; NGTB45N60S1WG; STGW60V60DF; STGWA45HF60WDI; NGTB35N60FL2WG; STGW39NC60VD; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NGTB40N60L2WGOS,2156 -NGTB40N60L2WG-OS,ON SONSNGTB40N60L2WG,28 32-NGTB40N60L2WG-488 ,2832-NGTB40N60L2WG Base Product Number: NGTB40 Product Status: Obsolete

Win Source Part Number: 1082082-NGTB40N60L2WG
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 30
Power - Max: 417 W
Reverse Recovery Time (trr): 73 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
Switching Energy: 1.17mJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 228 nC
Td (on/off) @ 25°C: 98ns/213ns
Test Condition: 400V, 40A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): FGH40N60SMDF; NGTB45N60S1WG; STGW60V60DF; STGWA45HF60WDI; NGTB35N60FL2WG; STGW39NC60VD;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NGTB40N60L2WGOS,2156-NGTB40N60L2WG-OS,ONSONSNGTB40N60L2WG,2832-NGTB40N60L2WG-488,2832-NGTB40N60L2WG
Base Product Number: NGTB40
Product Status: Obsolete

Buy Now Datasheet
Singapore
600V 40A IGBT Transistor
279-NGTB40N60L2WG
600V 40A IGBT Transistor 279-NGTB40N60L2WG
IGBT, 600V 40A FS2 Low VCEsat, 30-TUBE Product overview: NGTB40N60L2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB40N60L2WG can be used for catalog matching and distributor lookup.

IGBT, 600V 40A FS2 Low VCEsat, 30-TUBE Product overview: NGTB40N60L2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB40N60L2WG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - NGTB40N60L2WGOS-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench Field Stop 600V 80A 417W Through Hole TO-247-3

IGBT Trench Field Stop 600V 80A 417W Through Hole TO-247-3

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
NGTB40N60L2WG
IGBT Transistors NGTB40N60L2WG
IGBT Transistors 600V/40A FAST IGBT FSII T

IGBT Transistors 600V/40A FAST IGBT FSII T

Buy Now Datasheet
Igbt Single Transistor, 80 A, 2 V, 417 W, 600 V, To-247, 3 Rohs Compliant Onsemi - 31Y3221 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Single Transistor, 80 A, 2 V, 417 W, 600 V, To-247, 3 Rohs Compliant Onsemi
31Y3221
Igbt Single Transistor, 80 A, 2 V, 417 W, 600 V, To-247, 3 Rohs Compliant Onsemi 31Y3221
IGBT Single Transistor, 80 A, 2 V, 417 W, 600 V, TO-247, 3 RoHS Compliant: Yes

IGBT Single Transistor, 80 A, 2 V, 417 W, 600 V, TO-247, 3 RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - NGTB40N60L2WG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
NGTB40N60L2WG
Discrete Semiconductor Products - Transistors - IGBTs NGTB40N60L2WG
IGBT TRENCH/FS 600V 80A TO247

IGBT TRENCH/FS 600V 80A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1082082-NGTB40N60L2WG 279-NGTB40N60L2WG NGTB40N60L2WGOS-ND NGTB40N60L2WG 31Y3221 NGTB40N60L2WG
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single 600V 40A IGBT Transistor Single IGBTs IGBT Transistors Igbt Single Transistor, 80 A, 2 V, 417 W, 600 V, To-247, 3 Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - IGBTs
VCES 600 volts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-3; TO-247
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