IGBT Trench Field Stop 600V 80A 417W Through Hole TO-247-3
Win Source Part Number: 1082082-NGTB40N60L2W
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 417 W
Reverse Recovery Time (trr): 73 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
Switching Energy: 1.17mJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 228 nC
Td (on/off) @ 25°C: 98ns/213ns
Test Condition: 400V, 40A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): FGH40N60SMDF; NGTB45N60S1WG; STGW60V60DF; STGWA45HF60WDI; NGTB35N60FL2WG; STGW39NC60VD;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NGTB40N60L2WGOS,2156
Base Product Number: NGTB40
Product Status: Obsolete
IGBT, 600V 40A FS2 Low VCEsat, 30-TUBE Product overview: NGTB40N60L2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB40N60L2WG can be used for catalog matching and distributor lookup.
IGBT Single Transistor, 80 A, 2 V, 417 W, 600 V, TO-247, 3 RoHS Compliant: Yes
IGBT TRENCH/FS 600V 80A TO247
IGBT Transistors 600V/40A FAST IGBT FSII T
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGTB40N60L2WGOS-ND | 1082082-NGTB40N60L2WG | 279-NGTB40N60L2WG | 31Y3221 | NGTB40N60L2WG | NGTB40N60L2WG |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | 600V 40A IGBT Transistor | Igbt Single Transistor, 80 A, 2 V, 417 W, 600 V, To-247, 3 Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-3; TO-247 | |||
| Packing Method | Tube | Tube; Tube |
