onsemi IGBTs - Single - NGTB40N120FL2WG NGTB40N120FL2WG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1231156-NGTB40N120FL 2WG Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-247-3 Power - Max: 535W Reverse Recovery Time (trr): 240ns IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 200A Switching Energy: 3.4mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 116ns/286ns Test Condition: 600V, 40A, 10 Ohm, 15V Family Name: NGTB40N120FL2WG Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-247 Current - Collector (Ic) (Maximum): 80A Voltage - Collector Emitter Breakdown (Maximum): 1200V Vce(on) (Maximum) @ Vge, Ic: 2.4V @ 15V, 40A Alternative Parts (Cross-Reference): IXYH40N120C3D1; IXYH30N120C3D1; IXSH35N135A; ECCN: EAR99 Country of Origin: China, Czech Republic, Japan, Vietnam Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1231156-NGTB40N120FL 2WG Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-247-3 Power - Max: 535W Reverse Recovery Time (trr): 240ns IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 200A Switching Energy: 3.4mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 116ns/286ns Test Condition: 600V, 40A, 10 Ohm, 15V Family Name: NGTB40N120FL2WG Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-247 Current - Collector (Ic) (Maximum): 80A Voltage - Collector Emitter Breakdown (Maximum): 1200V Vce(on) (Maximum) @ Vge, Ic: 2.4V @ 15V, 40A Alternative Parts (Cross-Reference): IXYH40N120C3D1; IXYH30N120C3D1; IXSH35N135A; ECCN: EAR99 Country of Origin: China, Czech Republic, Japan, Vietnam Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - NGTB40N120FL2WG - 1231156-NGTB40N120FL2WG - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - NGTB40N120FL2WG
1231156-NGTB40N120FL2WG
IGBTs - Single - NGTB40N120FL2WG 1231156-NGTB40N120FL2WG
Manufacturer: ON Semiconductor Win Source Part Number: 1231156-NGTB40N120FL 2WG Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-247-3 Power - Max: 535W Reverse Recovery Time (trr): 240ns IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 200A Switching Energy: 3.4mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 116ns/286ns Test Condition: 600V, 40A, 10 Ohm, 15V Family Name: NGTB40N120FL2WG Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-247 Current - Collector (Ic) (Maximum): 80A Voltage - Collector Emitter Breakdown (Maximum): 1200V Vce(on) (Maximum) @ Vge, Ic: 2.4V @ 15V, 40A Alternative Parts (Cross-Reference): IXYH40N120C3D1; IXYH30N120C3D1; IXSH35N135A; ECCN: EAR99 Country of Origin: China, Czech Republic, Japan, Vietnam Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1231156-NGTB40N120FL2WG
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 535W
Reverse Recovery Time (trr): 240ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 200A
Switching Energy: 3.4mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 313nC
Td (on/off) @ 25°C: 116ns/286ns
Test Condition: 600V, 40A, 10 Ohm, 15V
Family Name: NGTB40N120FL2WG
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.4V @ 15V, 40A
Alternative Parts (Cross-Reference): IXYH40N120C3D1; IXYH30N120C3D1; IXSH35N135A;
ECCN: EAR99
Country of Origin: China, Czech Republic, Japan, Vietnam
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - NGTB40N120FL2WGOS-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench Field Stop 1200V 80A 535W Through Hole TO-247

IGBT Trench Field Stop 1200V 80A 535W Through Hole TO-247

Buy Now Datasheet
Single IGBTs NGTB40N120FL2WG
IGBT TRENCH/FS 1200V 80A TO247

IGBT TRENCH/FS 1200V 80A TO247

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
NGTB40N120FL2WG
IGBT Transistors NGTB40N120FL2WG
IGBT Transistors 1200V/40A FAST IGBT FSII

IGBT Transistors 1200V/40A FAST IGBT FSII

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - NGTB40N120FL2WG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
NGTB40N120FL2WG
Discrete Semiconductor Products - Transistors - IGBTs NGTB40N120FL2WG
IGBT TRENCH/FS 1200V 80A TO247

IGBT TRENCH/FS 1200V 80A TO247

Supplier's Site
Igbt, Single, 1.2Kv, 80A, To-247; Dc Collector Current Onsemi - 28X8012 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 1.2Kv, 80A, To-247; Dc Collector Current Onsemi
28X8012
Igbt, Single, 1.2Kv, 80A, To-247; Dc Collector Current Onsemi 28X8012
IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:535W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:535W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1231156-NGTB40N120FL2WG NGTB40N120FL2WGOS-ND NGTB40N120FL2WG NGTB40N120FL2WG NGTB40N120FL2WG 28X8012
Product Name IGBTs - Single - NGTB40N120FL2WG Single IGBTs Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs Igbt, Single, 1.2Kv, 80A, To-247; Dc Collector Current Onsemi
VCES 1200 volts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) ? to 175 C (? to 347 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
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