Trans IGBT Chip N-CH 1200V 80A 652000mW 3-Pin(3+Tab) TO-247 Tube Product overview: NGTB40N120FL2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 80A, 652000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 80A, 652000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB40N120FL2WG can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 1200V 80A 535W Through Hole TO-247
Manufacturer: ON Semiconductor
Win Source Part Number: 1231156-NGTB40N120FL
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 535W
Reverse Recovery Time (trr): 240ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 200A
Switching Energy: 3.4mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 313nC
Td (on/off) @ 25°C: 116ns/286ns
Test Condition: 600V, 40A, 10 Ohm, 15V
Family Name: NGTB40N120FL2WG
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.4V @ 15V, 40A
Alternative Parts (Cross-Reference): IXYH40N120C3D1; IXYH30N120C3D1; IXSH35N135A;
ECCN: EAR99
Country of Origin: China, Czech Republic, Japan, Vietnam
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
IGBT TRENCH/FS 1200V 80A TO247
IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:535W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
IGBT TRENCH/FS 1200V 80A TO247
IGBT Transistors 1200V/40A FAST IGBT FSII
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-NGTB40N120FL2WG | NGTB40N120FL2WGOS-ND | 1231156-NGTB40N120FL2WG | NGTB40N120FL2WG | 28X8012 | NGTB40N120FL2WG | NGTB40N120FL2WG |
| Product Name | 1200V 80A 652000mW IGBT Transistor | Single IGBTs | IGBTs - Single - NGTB40N120FL2WG | Single IGBTs | Igbt, Single, 1.2Kv, 80A, To-247; Dc Collector Current Onsemi | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| PD | 535000 milliwatts | 535000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | ||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3; TO-247 |
