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onsemi IGBT Transistors NGTB35N60FL2WG

Description
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 300 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 1MHz Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.
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Suppliers

Company
Product
Description
Supplier Links
 - 8427894P - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 300 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 1MHz Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 70 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 300 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 8427894 - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 300 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 1MHz Transistor Configuration = Single

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 70 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 300 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single

Supplier's Site
 - 1453243 - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 70 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 300 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 1MHz Transistor Configuration = Single

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 70 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 300 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
NGTB35N60FL2WG
IGBT Transistors NGTB35N60FL2WG
IGBT Transistors 600V/35A FAST IGBT FSII T

IGBT Transistors 600V/35A FAST IGBT FSII T

Supplier's Site Datasheet
IGBTs - Single - NGTB35N60FL2WG - 1231154-NGTB35N60FL2WG - Win Source Electronics
Yishun, Singapore
IGBTs - Single - NGTB35N60FL2WG
1231154-NGTB35N60FL2WG
IGBTs - Single - NGTB35N60FL2WG 1231154-NGTB35N60FL2WG
Manufacturer: ON Semiconductor Win Source Part Number: 1231154-NGTB35N60FL2 WG Manufacturer Homepage: www.onsemi.com Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1231154-NGTB35N60FL2WG
Manufacturer Homepage: www.onsemi.com
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Supplier's Site
Single IGBTs - NGTB35N60FL2WGOS-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench Field Stop 600V 70A 300W Through Hole TO-247-3

IGBT Trench Field Stop 600V 70A 300W Through Hole TO-247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - NGTB35N60FL2WG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
NGTB35N60FL2WG
Discrete Semiconductor Products - Transistors - IGBTs NGTB35N60FL2WG
IGBT TRENCH/FS 600V 70A TO247

IGBT TRENCH/FS 600V 70A TO247

Supplier's Site

Technical Specifications

  RS Components, Ltd. VAST STOCK CO., LIMITED Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 8427894P NGTB35N60FL2WG 1231154-NGTB35N60FL2WG NGTB35N60FL2WGOS-ND NGTB35N60FL2WG
Product Name IGBT Transistors IGBTs - Single - NGTB35N60FL2WG Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel
IC(max) 70 amps
PD 300000 milliwatts
Package Type TO-247; TO-247 SOT3 TO-247; TO-247-3
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