onsemi Single IGBTs NGTB30N60L2WG

IGBT 600V 100A 225W Through Hole TO-247-3

IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V, 30-TUBE Product overview: NGTB30N60L2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 30A, 1.4V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 600V, 30A, 1.4V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB30N60L2WG can be used for catalog matching and distributor lookup.

Manufacturer: onsemi
Win Source Part Number: 1324502-NGTB30N60L2WG
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 225 W
Reverse Recovery Time (trr): 70 ns
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Switching Energy: 310µJ (on), 1.14mJ (off)
Input Type: Standard
Gate Charge: 166 nC
Td (on/off) @ 25°C: 100ns/390ns
Test Condition: 300V, 30A, 30Ohm, 15V
Supplier Device Package: TO-247-3
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1990-NGTB30N60L2WG
Base Product Number: NGTB30
Product Status: Obsolete
RoHS Status: ROHS3 Compliant