onsemi Single IGBTs NGTB30N60FWG

IGBT Trench 600V 60A 167W Through Hole TO-247-3

Manufacturer: ON Semiconductor
Win Source Part Number: 887234-NGTB30N60FWG
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: IGBT Trench 600 V 60 A 167 W Through Hole TO-247-3
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Obsolete
Family Name: NGTB30
Categories: Discrete Semiconductor Products
Case / Package: TO-247-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Limited
Quantity per package: 30
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

IGBT 600V 60A 167W TO247

NGTB30N60FWG - Insulated Gate Bipolar Transistor, 60A, 600V, N-Channel

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 167 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 167 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single