- Trained on our vast library of engineering resources.

onsemi Single IGBTs NGTB30N120IHRWG

Description
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 384 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 1MHz Transistor Configuration = Single
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 7961331 - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 384 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 1MHz Transistor Configuration = Single

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 384 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single

Supplier's Site
 - 7961331P - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 384 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 1MHz Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 384 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Single IGBTs - NGTB30N120IHRWGOS-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench Field Stop 1200V 60A 384W Through Hole TO-247

IGBT Trench Field Stop 1200V 60A 384W Through Hole TO-247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - NGTB30N120IHRWG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
NGTB30N120IHRWG
Discrete Semiconductor Products - Transistors - IGBTs NGTB30N120IHRWG
IGBT 1200V 60A 384W TO247

IGBT 1200V 60A 384W TO247

Supplier's Site

Technical Specifications

  RS Components, Ltd. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 7961331 NGTB30N120IHRWGOS-ND NGTB30N120IHRWG
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel
IC(max) 60 amps
PD 384000 milliwatts
Package Type TO-247; TO-247 TO-247; TO-247-3
Unlock Full Specs
to access all available technical data

Similar Products

Silicon Carbide MOSFET Discretes - AIMBG120R080M1 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
 - 1219414 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity P-Channel
V(BR)DSS 20 volts
rDS(on) 0.9000 ohms
View Details
Power MOSFETs - SuperFAP-G Model: 2SK3535-01 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Specs
V(BR)DSS 250 volts
rDS(on) 0.1000 ohms
IDSS 37000 milliamps
View Details