IGBT Field Stop 1200V 50A 385W Through Hole TO-247-3
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube Product overview: NGTB25N120FL2WG from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A, 385000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A, 385000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB25N120FL2WG can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 209162-NGTB25N120FL2
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 154ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 178nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 385W
Pulsed Collector Current: 100A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 25A
Total Switching Energy(Ets): 1.95mJ (on), 600μJ (off)
Turn-on and Turn-off delay time: 87ns/179ns
Testing Conditions: 600V, 25A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Quantity per package: 30
IGBT FIELD STOP 1200V 50A TO247
IGBT Transistors 1200V/25 FAST IGBT FSII T
IGBT FIELD STOP 1200V 50A TO247
IGBT, 1.2KV, 50A, 175DEG C, 385W ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGTB25N120FL2WGOS-ND | 279-NGTB25N120FL2WG | 209162-NGTB25N120FL2WG | NGTB25N120FL2WG | NGTB25N120FL2WG | NGTB25N120FL2WG | 54AH9429 |
| Product Name | Single IGBTs | 1200V 50A 385000mW IGBT Transistor | IGBTs - Single - NGTB25N120FL2WG | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 1.2Kv, 50A, 175Deg C, 385W Rohs Compliant Onsemi |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-3 | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
