The NGD15N41ACLT4G is a logic-level N-channel IGBT in a DPAK package, designed for high-voltage, high-current switching applications such as ignition and direct fuel injection. It has a continuous collector current rating of 15 A, a collector-emitter voltage rating of 440 VDC, and a gate-emitter voltage rating of 15 VDC. The device features integrated ESD protection, a low saturation voltage (VCE(on)) of up to 2.3 V at 15 A and 150°C, and an unclamped inductive switching energy of up to 200 mJ at 125°C. Thermal resistance from junction to case is 1.4 °C/W, and junction-to-ambient thermal resistance is 100 °C/W when surface-mounted on an FR4 PCB. It meets ESD human body model rating of 8 kV and machine model rating of 800 V. The device is Pb-free and compliant with RoHS standards. Operating and storage junction temperature range is -55°C to +175°C.
INSULATED GATE BIPOLAR TRANSISTO
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGD15N41ACLT4G |
| Product Name | Single IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) |