IGBT 390V 20A 150W Surface Mount D²PAK
Motor / Motion / Ignition Controllers & Drivers 20A 350V Ignition Product overview: NGB8206N from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20A, 350V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 20A, 350V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGB8206N can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1010294-NGB8206N
Packaging: Tube/Rail
Mounting: SMD (SMT)
Input Type: Logic
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 390V
Maximum Power Dissipation: 150W
Pulsed Collector Current: 50A
Collector-emitter saturation voltage(Max): 1.9V @ 4.5V, 20A
Turn-on and Turn-off delay time: -/5μs
Testing Conditions: 300V, 9A, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
IGBT 390V 20A 150W D2PAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGB8206N-ND | 279-NGB8206N | 1010294-NGB8206N | NGB8206N |
| Product Name | Single IGBTs | 20A 350V IGBT Transistor | IGBTs - Single - NGB8206N | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |