N-Channel Ignition IGBT 20 A, 400 V, D2PAK 2 LEAD, 800-REEL Product overview: NGB8202NT4 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 A, 400 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 20 A, 400 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGB8202NT4 can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1082965-NGB8202NT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Logic
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 440V
Maximum Power Dissipation: 150W
Pulsed Collector Current: 50A
Collector-emitter saturation voltage(Max): 1.9V @ 4.5V, 20A
Turn-on and Turn-off delay time: -/5μs
Testing Conditions: 300V, 9A, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-NGB8202NT4 | 1082965-NGB8202NT4 | NGB8202NT4-ND | 598-NGB8202NT4 | NGB8202NT4 |
| Product Name | N-Channel 20 A 400 V IGBT Transistor | IGBTs - Single - NGB8202NT4 | Single IGBTs | IGBT 440V 20A 150W D2PAK | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
| VCE(on) | 1.9 volts | ||||
| Package Type | SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |||
| Packing Method | Tape Reel; Reel - TR | Tape Reel | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) |