Win Source Part Number: 1081910-NDS356AP-NB8
Category: Discrete Semiconductor Products>Transistors
Package: Tray
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: Vendor Undefined
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Base Product Number: NDS356
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3
-30V P-CHANNEL LOGIC LEVEL ENHAN
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1081910-NDS356AP-NB8L005A | NDS356AP-NB8L005A-ND | NDS356AP-NB8L005A |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel |
