onsemi Single FETs, MOSFETs NDS355N

Description
N-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Request a Quote Datasheet
Description
N-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NDS355NTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS355NTR-ND
Single FETs, MOSFETs NDS355NTR-ND
N-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS355N - 025167-NDS355N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS355N
025167-NDS355N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS355N 025167-NDS355N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 025167-NDS355N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 5nC @ 5V Max Input Capacitance: 245pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025167-NDS355N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 5nC @ 5V
Max Input Capacitance: 245pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS355N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS355N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS355N
MOSFET N-CH 30V 1.6A SUPERSOT3

MOSFET N-CH 30V 1.6A SUPERSOT3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
NDS355N
MOSFET NDS355N
MOSFET DISC BY MFG 2/02

MOSFET DISC BY MFG 2/02

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NDS355NTR-ND 025167-NDS355N NDS355N NDS355N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS355N Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SuperSOT-3 SOT23; TO-236-3, SC-59, SOT-23-3
V(BR)DSS 30 volts
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