onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDH8301N NDH8301N

Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1115283-NDH8301N Power Dissipation: 800 mW Number of Pins: 8 Rise Time: 25 ns Fall Time: 25 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Max Operating Temperature: 150 °C Continuous Drain Current (ID): 3 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 30 ns Gate to Source Voltage (Vgs): 8 V
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Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1115283-NDH8301N Power Dissipation: 800 mW Number of Pins: 8 Rise Time: 25 ns Fall Time: 25 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Max Operating Temperature: 150 °C Continuous Drain Current (ID): 3 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 30 ns Gate to Source Voltage (Vgs): 8 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDH8301N - 1115283-NDH8301N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDH8301N
1115283-NDH8301N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDH8301N 1115283-NDH8301N
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1115283-NDH8301N Power Dissipation: 800 mW Number of Pins: 8 Rise Time: 25 ns Fall Time: 25 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Max Operating Temperature: 150 °C Continuous Drain Current (ID): 3 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 30 ns Gate to Source Voltage (Vgs): 8 V

Manufacturer: Fairchild/ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1115283-NDH8301N
Power Dissipation: 800 mW
Number of Pins: 8
Rise Time: 25 ns
Fall Time: 25 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 3 A
Drain to Source Breakdown Voltage: 20 V
Turn-Off Delay Time: 30 ns
Gate to Source Voltage (Vgs): 8 V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1115283-NDH8301N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDH8301N
Package Type SOT3
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