onsemi Single FETs, MOSFETs NDD60N900U1-1G

N-Channel 600V 5.7A (Tc) 74W (Tc) Through Hole I-PAK

Manufacturer: ON Semiconductor
Win Source Part Number: 755320-NDD60N900U1-1G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 74W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 75
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 5.7A
Rds On (Maximum) at Id, Vgs: 900mOhm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 12nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 360pF at 50V

MOSFET N-CH 600V 5.9A IPAK-4 Product overview: NDD60N900U1-1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 5.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDD60N900U1-1G can be used for catalog matching and distributor lookup.