Manufacturer: ON Semiconductor
Win Source Part Number: 1005349-NDD03N50Z-1G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 58W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 274pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.3 Ohm @ 1.15A, 10V
Alternative Parts (Cross-Reference): STD3NK50Z-1; AOU3N50; 2SK2616;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
N-Channel 500V 2.6A (Tc) 58W (Tc) Through Hole I-PAK
MOSFET N-CH 500V 2.6A IPAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1005349-NDD03N50Z-1G | NDD03N50Z-1GOS-ND | NDD03N50Z-1G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD03N50Z-1G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 500 volts | ||
| PD | 58000 milliwatts |
