onsemi Single FETs, MOSFETs NDD03N50Z-1G

N-Channel 500V 2.6A (Tc) 58W (Tc) Through Hole I-PAK

500V 2.6A N-CH MOSFET, 3.3R Rds(on), TO-251 Product overview: NDD03N50Z-1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDD03N50Z-1G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1005349-NDD03N50Z-1G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 58W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 274pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.3 Ohm @ 1.15A, 10V
Alternative Parts (Cross-Reference): STD3NK50Z-1; AOU3N50; 2SK2616;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance