onsemi Single FETs, MOSFETs NDD03N50Z-1G

Description
N-Channel 500V 2.6A (Tc) 58W (Tc) Through Hole I-PAK
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Description
N-Channel 500V 2.6A (Tc) 58W (Tc) Through Hole I-PAK
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - NDD03N50Z-1GOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDD03N50Z-1GOS-ND
Single FETs, MOSFETs NDD03N50Z-1GOS-ND
N-Channel 500V 2.6A (Tc) 58W (Tc) Through Hole I-PAK

N-Channel 500V 2.6A (Tc) 58W (Tc) Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD03N50Z-1G - 1005349-NDD03N50Z-1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD03N50Z-1G
1005349-NDD03N50Z-1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD03N50Z-1G 1005349-NDD03N50Z-1G
Manufacturer: ON Semiconductor Win Source Part Number: 1005349-NDD03N50Z-1G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 274pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.3 Ohm @ 1.15A, 10V Alternative Parts (Cross-Reference): STD3NK50Z-1; AOU3N50; 2SK2616; Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1005349-NDD03N50Z-1G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 58W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 274pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.3 Ohm @ 1.15A, 10V
Alternative Parts (Cross-Reference): STD3NK50Z-1; AOU3N50; 2SK2616;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDD03N50Z-1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDD03N50Z-1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDD03N50Z-1G
MOSFET N-CH 500V 2.6A IPAK

MOSFET N-CH 500V 2.6A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NDD03N50Z-1GOS-ND 1005349-NDD03N50Z-1G NDD03N50Z-1G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD03N50Z-1G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 500 volts
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