onsemi N-Channel 100V 180A MOSFET Transistor NDBA180N10BT4H

Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel, 800-REEL Product overview: NDBA180N10BT4H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDBA180N10BT4H can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1230837-NDBA180N10BT4H
Packaging: Reel - TR
Operating Temperature Range: 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
Family Name: NDBA180N10B
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: D2PAK (TO-263)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6950pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 200W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.8 mOhm @ 50A, 15V
Alternative Parts (Cross-Reference): SQM120N10-3m8_GE3; STH185N10F3-2; AOB290L;
Introduction Date: July 29, 2014
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited