MOSFET N-CH 60V 26A D2PAK
N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263)
MOSFETs N-Ch LL FET Enhancement Mode Product overview: NDB5060L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-NDB5060L can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025148-NDB5060L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 24nC @ 5V
Max Input Capacitance: 840pF @ 30V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 35 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET, N-CH, 60V, 26A, 175DEG C, 68W ROHS COMPLIANT: YES
MOSFET N-CH 60V 26A D2PAK
MOSFET N-Ch LL FET Enhancement Mode
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NDB5060L | NDB5060LTR-ND | 2088-NDB5060L | 025148-NDB5060L | 54AH9423 | NDB5060L | NDB5060L |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDB5060L | Mosfet, N-Ch, 60V, 26A, 175Deg C, 68W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 26000 milliamps | ||||||
| PD | 68000 milliwatts | 68 milliwatts | 68000 milliwatts |