onsemi Single FETs, MOSFETs MTP23P06VG

Description
P-Channel 60V 23A (Tc) 90W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
P-Channel 60V 23A (Tc) 90W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MTP23P06VGOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTP23P06VGOS-ND
Single FETs, MOSFETs MTP23P06VGOS-ND
P-Channel 60V 23A (Tc) 90W (Tc) Through Hole TO-220

P-Channel 60V 23A (Tc) 90W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP23P06VG - 1081105-MTP23P06VG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP23P06VG
1081105-MTP23P06VG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP23P06VG 1081105-MTP23P06VG
Manufacturer: ON Semiconductor Win Source Part Number: 1081105-MTP23P06VG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1620pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 120 mOhm @ 11.5A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 1081105-MTP23P06VG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1620pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 120 mOhm @ 11.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial

Buy Now Datasheet
Transistor - 25788520 - Radwell International
Willingboro, NJ, United States
Transistor
25788520
Transistor 25788520
DISCONTINUED BY MANUFACTURER, MOSFET TRANSISTOR, 23AMP60V, P-CHANNEL. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, MOSFET TRANSISTOR, 23AMP60V, P-CHANNEL. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTP23P06VG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTP23P06VG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTP23P06VG
MOSFET P-CH 60V 23A TO220AB

MOSFET P-CH 60V 23A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number MTP23P06VGOS-ND 1081105-MTP23P06VG 25788520 MTP23P06VG
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP23P06VG Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 60 volts
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