Manufacturer: ON Semiconductor
Win Source Part Number: 1081105-MTP23P06VG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1620pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 120 mOhm @ 11.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial
P-Channel 60V 23A (Tc) 90W (Tc) Through Hole TO-220
MOSFET P-CH 60V 23A TO220AB
DISCONTINUED BY MANUFACTURER, MOSFET TRANSISTOR, 23AMP60V, P-CHANNEL. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors |
| Product Number | 1081105-MTP23P06VG | MTP23P06VGOS-ND | MTP23P06VG | 25788520 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP23P06VG | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | P-Channel; P-Channel | P-Channel | ||
| V(BR)DSS | 60 volts | |||
| PD | 90000 milliwatts |
