MOSFET N-CH 60V 12A TO252-3
N-Channel 60V 12A (Tc) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 024581-MTD3055VL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10nC @ 5V
Max Input Capacitance: 570pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
Quantity per package: 2,500
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 60V, 0.18OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 60V, 12A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:5V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 12 A, 60 V, 0.18 ohm, 5 V, 1.5 V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 12 A, 60 V, 0.18 ohm, 5 V, 1.5 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 12A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:5V RoHS Compliant: Yes
MOSFET N-Ch LL FET Enhancement Mode
MOSFET N-CH 60V 12A TO252-3
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | MTD3055VL | MTD3055VLTR-ND | 024581-MTD3055VL | 16131626 | 63K5835 | 95M4342 | MTD3055VL | MTD3055VL |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD3055VL | Transistor | N Channel Mosfet, 60V, 12A, To-252; Transistor Polarity Onsemi | Mosfet Transistor, N Channel, 12 A, 60 V, 0.18 Ohm, 5 V, 1.5 V Rohs Compliant Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 12000 milliamps | 12000 milliamps | ||||||
| PD | 3900 milliwatts | 3900 to 48000 milliwatts |
