onsemi Single FETs, MOSFETs MTD3055V

Description
N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA
  • Single FETs, MOSFETs - MTD3055VTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - MTD3055V - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FETs - Single - MTD3055V - 802291-MTD3055V - Win Source Electronics
    Win Source Electronics
  • Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi - 29X6779 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTD3055V - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MTD3055VTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTD3055VTR-ND
Single FETs, MOSFETs MTD3055VTR-ND
N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA

N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - MTD3055V - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MTD3055V
Single FETs, MOSFETs MTD3055V
MOSFET N-CH 60V 12A TO252-3

MOSFET N-CH 60V 12A TO252-3

Supplier's Site Datasheet
FETs - Single - MTD3055V - 802291-MTD3055V - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - MTD3055V
802291-MTD3055V
FETs - Single - MTD3055V 802291-MTD3055V
Manufacturer: ON Semiconductor Win Source Part Number: 802291-MTD3055V Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 3.9W , 48W (Tc) Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 150mOhm at 6A, 10V Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V Current - Continuous Drain (Id) at 25°C: 12A Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 802291-MTD3055V
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 3.9W , 48W (Tc)
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 150mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V
Current - Continuous Drain (Id) at 25°C: 12A
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V

Buy Now
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
MTD3055V
MOSFET MTD3055V
MOSFET N-Channel FET Enhancement Mode

MOSFET N-Channel FET Enhancement Mode

Buy Now Datasheet
Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi - 29X6779 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi
29X6779
Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi 29X6779
MOSFET, N CHANNEL, 60V, 12A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

MOSFET, N CHANNEL, 60V, 12A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTD3055V - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTD3055V
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTD3055V
MOSFET N-CH 60V 12A TO252-3

MOSFET N-CH 60V 12A TO252-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MTD3055VTR-ND MTD3055V 802291-MTD3055V MTD3055V 29X6779 MTD3055V
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - MTD3055V MOSFET Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
IDSS 12000 milliamps 12000 milliamps
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