N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA
MOSFET N-CH 60V 12A TO252-3
N-CH MOSFET 60V 12A DPAK TO-252 SMT Product overview: MTD3055V from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTD3055V can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 802291-MTD3055V
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 3.9W , 48W (Tc)
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 150mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V
Current - Continuous Drain (Id) at 25°C: 12A
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V
MOSFET N-CH 60V 12A TO252-3
MOSFET, N CHANNEL, 60V, 12A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
MOSFET N-Channel FET Enhancement Mode
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MTD3055VTR-ND | MTD3055V | 278-MTD3055V | 802291-MTD3055V | MTD3055V | 29X6779 | MTD3055V |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 12A DPAK MOSFET Transistor | FETs - Single - MTD3055V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 12000 milliamps | 12000 milliamps |
