onsemi Single FETs, MOSFETs MTD3055V

Description
N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA
  • Single FETs, MOSFETs - MTD3055VTR-ND - DigiKey
    DigiKey
  • FETs - Single - MTD3055V - 802291-MTD3055V - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - MTD3055V - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTD3055V - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi - 29X6779 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MTD3055VTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTD3055VTR-ND
Single FETs, MOSFETs MTD3055VTR-ND
N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA

N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
FETs - Single - MTD3055V - 802291-MTD3055V - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - MTD3055V
802291-MTD3055V
FETs - Single - MTD3055V 802291-MTD3055V
Manufacturer: ON Semiconductor Win Source Part Number: 802291-MTD3055V Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 3.9W , 48W (Tc) Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 150mOhm at 6A, 10V Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V Current - Continuous Drain (Id) at 25°C: 12A Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 802291-MTD3055V
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 3.9W , 48W (Tc)
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 150mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V
Current - Continuous Drain (Id) at 25°C: 12A
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V

Buy Now
Single FETs, MOSFETs - MTD3055V - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MTD3055V
Single FETs, MOSFETs MTD3055V
MOSFET N-CH 60V 12A TO252-3

MOSFET N-CH 60V 12A TO252-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTD3055V - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTD3055V
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTD3055V
MOSFET N-CH 60V 12A TO252-3

MOSFET N-CH 60V 12A TO252-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
MTD3055V
MOSFET MTD3055V
MOSFET N-Channel FET Enhancement Mode

MOSFET N-Channel FET Enhancement Mode

Buy Now Datasheet
Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi - 29X6779 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi
29X6779
Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi 29X6779
MOSFET, N CHANNEL, 60V, 12A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

MOSFET, N CHANNEL, 60V, 12A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number MTD3055VTR-ND 802291-MTD3055V MTD3055V MTD3055V MTD3055V 29X6779
Product Name Single FETs, MOSFETs FETs - Single - MTD3055V Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Channel, 60V, 12A, To-252-3; Channel Type Onsemi
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
QG 17 nC
PD 3900 to 48000 milliwatts 3900 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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