onsemi TRANSISTORS - RF Transistors (BJT) - MPSH17G MPSH17G

Manufacturer: ON Semiconductor
Win Source Part Number: 240018-MPSH17G
Packaging: Bulk
Mounting: Through Hole
Gain: 24dB
Frequency - Transition: 800MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 25 @ 5mA, 10V
Maximum Power Dissipation: 350mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)

CATV Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX Product overview: MPSH17G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MPSH17G can be used for catalog matching and distributor lookup.