onsemi Bipolar RF Transistors MPSH17G

Description
RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)
  • Bipolar RF Transistors - MPSH17GOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - RF Transistors (BJT) - MPSH17G - 240018-MPSH17G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSH17G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - MPSH17GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
MPSH17GOS-ND
Bipolar RF Transistors MPSH17GOS-ND
RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)

RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - MPSH17G - 240018-MPSH17G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MPSH17G
240018-MPSH17G
TRANSISTORS - RF Transistors (BJT) - MPSH17G 240018-MPSH17G
Manufacturer: ON Semiconductor Win Source Part Number: 240018-MPSH17G Packaging: Bulk Mounting: Through Hole Gain: 24dB Frequency - Transition: 800MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 6dB @ 200MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 25 @ 5mA, 10V Maximum Power Dissipation: 350mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 240018-MPSH17G
Packaging: Bulk
Mounting: Through Hole
Gain: 24dB
Frequency - Transition: 800MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 25 @ 5mA, 10V
Maximum Power Dissipation: 350mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSH17G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPSH17G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPSH17G
RF TRANS NPN 15V 800MHZ TO92-3

RF TRANS NPN 15V 800MHZ TO92-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MPSH17GOS-ND 240018-MPSH17G MPSH17G
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - MPSH17G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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