onsemi Single FETs, MOSFETs MMFT960T1G

N-Channel 60V 300mA (Tc) 800mW (Ta) Surface Mount SOT-223 (TO-261)

MOSFET N-CH 60V 300MA SOT223

Small Signal MOSFET 60V 300mA 1.7 Ohm Single N-Channel SOT-223, SOT-223 (TO-261) 4 LEAD, 1000-REEL Product overview: MMFT960T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 300mA, 1.7 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 300mA, 1.7 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MMFT960T1G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1078386-MMFT960T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 800mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 300mA (Tc)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Gate Charge: 3.2nC @ 10V
Max Input Capacitance: 65pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 1A, 10V
Alternative Parts (Cross-Reference): ZVN4206GTA; MMFT960; MMFT960T1;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance