onsemi Single FETs, MOSFETs MMDF3N02HDR2

Description
N-Channel 20V 3.8A (Ta) 2W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 20V 3.8A (Ta) 2W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MMDF3N02HDR2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MMDF3N02HDR2-ND
Single FETs, MOSFETs MMDF3N02HDR2-ND
N-Channel 20V 3.8A (Ta) 2W (Ta) Surface Mount 8-SOIC

N-Channel 20V 3.8A (Ta) 2W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
FETs - Single - MMDF3N02HDR2 - 1225240-MMDF3N02HDR2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - MMDF3N02HDR2
1225240-MMDF3N02HDR2
FETs - Single - MMDF3N02HDR2 1225240-MMDF3N02HDR2
Manufacturer: ON Semiconductor Win Source Part Number: 1225240-MMDF3N02HDR2 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 3.8A Rds On (Maximum) at Id, Vgs: 90mOhm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 630pF at 16V

Manufacturer: ON Semiconductor
Win Source Part Number: 1225240-MMDF3N02HDR2
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 3.8A
Rds On (Maximum) at Id, Vgs: 90mOhm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 630pF at 16V

Buy Now
MOSFET N-CH 20V 3.8A 8-SOIC - 598-MMDF3N02HDR2 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 20V 3.8A 8-SOIC
598-MMDF3N02HDR2
MOSFET N-CH 20V 3.8A 8-SOIC 598-MMDF3N02HDR2
MOSFET N-CH 20V 3.8A 8-SOIC

MOSFET N-CH 20V 3.8A 8-SOIC

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MMDF3N02HDR2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MMDF3N02HDR2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MMDF3N02HDR2
MOSFET N-CH 20V 3.8A 8SOIC

MOSFET N-CH 20V 3.8A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MMDF3N02HDR2-ND 1225240-MMDF3N02HDR2 598-MMDF3N02HDR2 MMDF3N02HDR2
Product Name Single FETs, MOSFETs FETs - Single - MMDF3N02HDR2 MOSFET N-CH 20V 3.8A 8-SOIC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3 18 nC @ 10 V
V(BR)DSS 20 volts 20 volts
QG 18 nC
PD 2000 milliwatts 2000 milliwatts
Unlock Full Specs
to access all available technical data