onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2P02ER2 MMDF2P02ER2

Description
Manufacturer: ON Semiconductor Win Source Part Number: 059211-MMDF2P02ER2 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 2.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 475pF @ 16V Maximum Rds On at Id,Vgs: 250 mOhm @ 2A, 10V
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 059211-MMDF2P02ER2 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 2.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 475pF @ 16V Maximum Rds On at Id,Vgs: 250 mOhm @ 2A, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2P02ER2 - 059211-MMDF2P02ER2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2P02ER2
059211-MMDF2P02ER2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2P02ER2 059211-MMDF2P02ER2
Manufacturer: ON Semiconductor Win Source Part Number: 059211-MMDF2P02ER2 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 2.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 475pF @ 16V Maximum Rds On at Id,Vgs: 250 mOhm @ 2A, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 059211-MMDF2P02ER2
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 2.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 475pF @ 16V
Maximum Rds On at Id,Vgs: 250 mOhm @ 2A, 10V

Buy Now Datasheet
Power MOSFET 25V 2.5A 250 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL - 598-MMDF2P02ER2 - Utmel Electronic Limited
Hong Kong, China
Power MOSFET 25V 2.5A 250 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
598-MMDF2P02ER2
Power MOSFET 25V 2.5A 250 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL 598-MMDF2P02ER2
Power MOSFET 25V 2.5A 250 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL

Power MOSFET 25V 2.5A 250 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number 059211-MMDF2P02ER2 598-MMDF2P02ER2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF2P02ER2 Power MOSFET 25V 2.5A 250 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
Polarity P-Channel P-Channel
V(BR)DSS 25 volts
PD 2000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

CSD18532NQ5B 60-V N-Channel NexFET? Power MOSFET - CSD18532NQ5B - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 135000 milliamps
View Details
6 suppliers
N-Channel Power MOSFET - BSB165N15NZ3 G - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0165 ohms
View Details
3 suppliers
Power MOSFETs - SuperFAP-E3 Model: FMV06N80E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Specs
V(BR)DSS 800 volts
rDS(on) 2 ohms
IDSS 6000 milliamps
View Details