onsemi FET, MOSFET Arrays MMDF2C03HDR2G

Mosfet Array N and P-Channel 30V 4.1A, 3A 2W Surface Mount 8-SOIC

Manufacturer: ON Semiconductor
Win Source Part Number: 1078374-MMDF2C03HDR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.1A, 3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 630pF @ 24V
Maximum Rds On at Id,Vgs: 70 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

30V 2A N/P-Ch MOSFET SOIC 70mR Dual Complementary Product overview: MMDF2C03HDR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-MMDF2C03HDR2G can be used for catalog matching and distributor lookup.