onsemi Transistor MJE803G

Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 4A I(C), 80V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-225, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 18727337 - Radwell International
    Radwell International
  • Single Bipolar Transistors - MJE803G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single Bipolar Transistors - MJE803GOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MJE803G - 1223752-MJE803G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE803G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 4A I(C), 80V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-225, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 18727337 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
18727337
Transistor 18727337
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 4A I(C), 80V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-225, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 4A I(C), 80V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-225, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single Bipolar Transistors - MJE803G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJE803G
Single Bipolar Transistors MJE803G
TRANS NPN DARL 80V 4A TO126

TRANS NPN DARL 80V 4A TO126

Supplier's Site Datasheet
Single Bipolar Transistors - MJE803GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE803GOS-ND
Single Bipolar Transistors MJE803GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE803G - 1223752-MJE803G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE803G
1223752-MJE803G
TRANSISTORS - Transistors (BJT) - Single - MJE803G 1223752-MJE803G
Manufacturer: ON Semiconductor Win Source Part Number: 1223752-MJE803G Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: NPN - Darlington Family Name: MJE803 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com RoHS State: Request Verification Manufacturer Package: TO-225AA Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Maximum): 100μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 2A, 3V Alternative Parts (Cross-Reference): MJE803; BD679 Lead Free; BD679; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1223752-MJE803G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 40W
Transistor Type: NPN - Darlington
Family Name: MJE803
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
RoHS State: Request Verification
Manufacturer Package: TO-225AA
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 2A, 3V
Alternative Parts (Cross-Reference): MJE803; BD679 Lead Free; BD679;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Darlington Transistors
MJE803G
Darlington Transistors MJE803G
Darlington Transistors 4A 80V Bipolar Power NPN

Darlington Transistors 4A 80V Bipolar Power NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE803G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE803G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE803G
TRANS NPN DARL 80V 4A TO126

TRANS NPN DARL 80V 4A TO126

Supplier's Site

Technical Specifications

  Radwell International ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Transistors RF Transistors Darlington Transistors Bipolar RF Transistors
Product Number 18727337 MJE803G MJE803GOS-ND 1223752-MJE803G MJE803G MJE803G
Product Name Transistor Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJE803G Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN - Darlington; NPN NPN NPN
Package Type TO-225AA, TO-126-3 TO-225AA, TO-126-3 SOT3
IC(max) 4000 milliamps 4000 milliamps
VCEO 80 volts 80 volts
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