onsemi Single Bipolar Transistors MJE803G

Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126

Manufacturer: ON Semiconductor
Win Source Part Number: 1223752-MJE803G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 40W
Transistor Type: NPN - Darlington
Family Name: MJE803
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
RoHS State: Request Verification
Manufacturer Package: TO-225AA
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 2A, 3V
Alternative Parts (Cross-Reference): MJE803; BD679 Lead Free; BD679;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

80V 4A NPN Darlington BJT Power Transistor, TO-225 Product overview: MJE803G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE803G can be used for catalog matching and distributor lookup.

TRANS NPN DARL 80V 4A TO126