onsemi Single Bipolar Transistors MJE170STU

Bipolar (BJT) Transistor PNP 40V 3A 50MHz 1.5W Through Hole TO-126-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 208444-MJE170STU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 1.7V @ 600mA, 3A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 50 @ 100mA, 1V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 1,920

PNP BJT Transistor, 40V VCEO, 3A IC, 50MHz, TO-126 Product overview: MJE170STU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3A, 50MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 3A, 50MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE170STU can be used for catalog matching and distributor lookup.