The MJD45H11G is a complementary PNP silicon power transistor designed for general purpose switching and amplification applications such as power regulators and amplifiers. It is packaged in a DPAK (CASE 369C) surface mount package with dimensions 6.10mm x 6.54mm x 2.28mm. The device has a collector-emitter voltage rating of 80 Vdc, continuous collector current of 8 Adc, and maximum power dissipation of 20 W at TC = 25°C. It features low collector-emitter saturation voltage, fast switching speeds, and is RoHS compliant, Pb-free, halogen-free, and AEC-Q101 qualified. The epoxy meets UL 94 V-0 flammability rating.
RF TRANSISTOR, PNP, -80V, 90MHZ, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 26AC2127 |
| Product Name | Rf Transistor, Pnp, -80V, 90Mhz, D-Pak; Transistor Polarity Onsemi |
| Transistor Type | Rf Transistor, Pnp, -80V, 90Mhz, D-Pak; Transistor Polarity Onsemi |
