MJD44H11G is an NPN power transistor in a DPAK package, designed for general purpose switching and output stages. It has a maximum collector-emitter voltage of 80 V, a continuous collector current of 8 A, and a total power dissipation of 20 W at 25°C case temperature. The device features a gain-bandwidth product of 85 MHz, a collector-emitter saturation voltage of up to 1 V at 8 A collector current, and a thermal resistance junction-to-case of 6.25 °C/W. It is Pb-free, RoHS compliant, and meets AEC-Q101 qualification for automotive applications. The package is surface mount with three terminals and complies with UL 94 V-0 flammability rating.
RF TRANSISTOR, NPN, 80V, 85MHZ DPAK; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:85MHzRoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 26AC2125 |
| Product Name | Rf Transistor, Npn, 80V, 85Mhz Dpak; Transistor Polarity Onsemi |
| Transistor Type | Rf Transistor, Npn, 80V, 85Mhz Dpak; Transistor Polarity Onsemi |
