onsemi Single Bipolar Transistors MJD350T4GN

The MJD350T4GN is a PNP silicon power transistor in a DPAK package, rated for 300 V collector-emitter voltage, 0.5 A continuous collector current, and 15 W power dissipation at 25°C case temperature. It features a thermal resistance junction-to-case of 8.33 °C/W and is designed for switching applications such as audio output amplifiers and switchmode power supply drivers. The device is Pb-free, halogen-free, RoHS compliant, and meets UL 94 V-0 flammability standards. It is AEC-Q101 qualified and PPAP capable for automotive applications.