onsemi Transistor Polarity Onsemi MJD243G.

Description
Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:1.4W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:40MHz; DC Current Gain hFE Min:40hFE RoHS Compliant: Yes
Description
Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:1.4W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:40MHz; DC Current Gain hFE Min:40hFE RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The MJD243G is an NPN silicon power transistor in a DPAK-3 surface-mount package, designed for low-voltage, low-power, high-gain audio amplifier applications. It has a continuous collector current rating of 4.0 A, a collector-emitter voltage of 100 V, and a total device dissipation of 1.4 W at 25°C ambient temperature. The device features a minimum DC current gain (hFE) of 40 at 200 mA collector current and a current-gain-bandwidth product of 40 MHz. It meets UL 94 V-0 flammability standards, is RoHS compliant, and is Pb-free and halogen-free. The thermal resistance from junction to case is 10°C/W, and junction temperature operates from -65°C to +150°C.

Datasheet Summary
Powered by GS/AI

The MJD243G is an NPN silicon power transistor in a DPAK-3 surface-mount package, designed for low-voltage, low-power, high-gain audio amplifier applications. It has a continuous collector current rating of 4.0 A, a collector-emitter voltage of 100 V, and a total device dissipation of 1.4 W at 25°C ambient temperature. The device features a minimum DC current gain (hFE) of 40 at 200 mA collector current and a current-gain-bandwidth product of 40 MHz. It meets UL 94 V-0 flammability standards, is RoHS compliant, and is Pb-free and halogen-free. The thermal resistance from junction to case is 10°C/W, and junction temperature operates from -65°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
Transistor Polarity Onsemi - 26AC2115 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Onsemi
26AC2115
Transistor Polarity Onsemi 26AC2115
Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:1.4W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:40MHz; DC Current Gain hFE Min:40hFE RoHS Compliant: Yes

Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:1.4W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:40MHz; DC Current Gain hFE Min:40hFE RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 26AC2115
Product Name Transistor Polarity Onsemi
Transistor Type Transistor Polarity Onsemi
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