onsemi Transistor Polarity Onsemi MJD200G.

The MJD200G is a surface mount NPN silicon power transistor in a DPAK package designed for low voltage, low-power, high-gain audio amplifier applications. It has a continuous collector current rating of 5.0 A, a collector-emitter voltage of 25 V, and a power dissipation of 1.4 W at 25°C, with a derating of 0.011 W/°C above 25°C. The device features a minimum DC current gain (hFE) of 70 at 500 mA and 45 at 2 A, with a current-gain-bandwidth product of 65 MHz. It meets UL 94 V-0 flammability requirements and is Pb-free and RoHS compliant. The thermal resistance from junction to ambient is 89.3°C/W when surface mounted on recommended pad dimensions. The part is AEC-Q101 qualified and PPAP capable when prefixed with NJV.