onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MGSF2N02ELT1 MGSF2N02ELT1

Description
Manufacturer: ON Semiconductor Win Source Part Number: 058492-MGSF2N02ELT1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.5nC @ 4V Max Input Capacitance: 150pF @ 5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.6A, 4.5V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 058492-MGSF2N02ELT1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.5nC @ 4V Max Input Capacitance: 150pF @ 5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.6A, 4.5V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - MGSF2N02ELT1 - 058492-MGSF2N02ELT1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MGSF2N02ELT1
058492-MGSF2N02ELT1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MGSF2N02ELT1 058492-MGSF2N02ELT1
Manufacturer: ON Semiconductor Win Source Part Number: 058492-MGSF2N02ELT1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.5nC @ 4V Max Input Capacitance: 150pF @ 5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.6A, 4.5V

Manufacturer: ON Semiconductor
Win Source Part Number: 058492-MGSF2N02ELT1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.5nC @ 4V
Max Input Capacitance: 150pF @ 5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.6A, 4.5V

Buy Now Datasheet
Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL - 598-MGSF2N02ELT1 - Utmel Electronic Limited
Hong Kong, China
Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL
598-MGSF2N02ELT1
Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL 598-MGSF2N02ELT1
Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL

Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL

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Technical Specifications

  Win Source Electronics Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number 058492-MGSF2N02ELT1 598-MGSF2N02ELT1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MGSF2N02ELT1 Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts
PD 1250 milliwatts
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