onsemi Discrete Semiconductor Products - Transistors - IGBTs MGP4N60ED

Description
Insulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-220AB
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Description
Insulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MGP4N60ED - Rochester Electronics
Newburyport, MA, United States
Insulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - MGP4N60ED - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
MGP4N60ED
Discrete Semiconductor Products - Transistors - IGBTs MGP4N60ED
IGBT, 6A, 600V, N-CHANNEL

IGBT, 6A, 600V, N-CHANNEL

Supplier's Site

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number MGP4N60ED MGP4N60ED
Product Name Discrete Semiconductor Products - Transistors - IGBTs
Package Type TO-220; TO-220AB
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