onsemi FET, MOSFET Arrays MCH6661-TL-W

Description
MOSFET 2N-CH 30V 1.8A SOT363
Request a Quote Datasheet
Description
MOSFET 2N-CH 30V 1.8A SOT363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - MCH6661-TL-W - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
MCH6661-TL-W
FET, MOSFET Arrays MCH6661-TL-W
MOSFET 2N-CH 30V 1.8A SOT363

MOSFET 2N-CH 30V 1.8A SOT363

Supplier's Site Datasheet
FETs - Arrays - MCH6661-TL-W - 802710-MCH6661-TL-W - Win Source Electronics
Laguna Hills, CA, United States
FETs - Arrays - MCH6661-TL-W
802710-MCH6661-TL-W
FETs - Arrays - MCH6661-TL-W 802710-MCH6661-TL-W
Manufacturer: ON Semiconductor Win Source Part Number: 802710-MCH6661-TL-W Packaging: Reel Mounting Style: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Power - Max: 800mW Supplier Device Package: SC-88FL/MCPH6 Temperature Range - Operating: 150°C Manufacturer Package: 6-SMD, Flat Leads Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 188mOhm at 900mA, 10V Gate Charge (Qg) (Maximum) at Vgs: 2nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 88pF at 10V Current - Continuous Drain (Id) at 25°C: 1.8A Vgs(th) (Maximum) at Id: 2.6V at 1mA

Manufacturer: ON Semiconductor
Win Source Part Number: 802710-MCH6661-TL-W
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
Supplier Device Package: SC-88FL/MCPH6
Temperature Range - Operating: 150°C
Manufacturer Package: 6-SMD, Flat Leads
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 188mOhm at 900mA, 10V
Gate Charge (Qg) (Maximum) at Vgs: 2nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 88pF at 10V
Current - Continuous Drain (Id) at 25°C: 1.8A
Vgs(th) (Maximum) at Id: 2.6V at 1mA

Buy Now
FET, MOSFET Arrays - MCH6661-TL-WOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
MCH6661-TL-WOSTR-ND
FET, MOSFET Arrays MCH6661-TL-WOSTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 1.8A 800mW Surface Mount SC-88FL/MCPH6

Mosfet Array 2 N-Channel (Dual) 30V 1.8A 800mW Surface Mount SC-88FL/MCPH6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MCH6661-TL-W - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MCH6661-TL-W
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MCH6661-TL-W
MOSFET 2N-CH 30V 1.8A SC88FL

MOSFET 2N-CH 30V 1.8A SC88FL

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NCH 1.7A 30V SOT-363

MOSFET NCH 1.7A 30V SOT-363

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number MCH6661-TL-W 802710-MCH6661-TL-W MCH6661-TL-WOSTR-ND MCH6661-TL-W MCH6661-TL-W
Product Name FET, MOSFET Arrays FETs - Arrays - MCH6661-TL-W FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
IDSS 1800 milliamps
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