onsemi Single FETs, MOSFETs MCH6421-TL-E

Description
N-Channel 20V 5.5A (Ta) 1.5W (Ta) Surface Mount 6-MCPH
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Description
N-Channel 20V 5.5A (Ta) 1.5W (Ta) Surface Mount 6-MCPH
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MCH6421-TL-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MCH6421-TL-EOSTR-ND
Single FETs, MOSFETs MCH6421-TL-EOSTR-ND
N-Channel 20V 5.5A (Ta) 1.5W (Ta) Surface Mount 6-MCPH

N-Channel 20V 5.5A (Ta) 1.5W (Ta) Surface Mount 6-MCPH

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FETs - Single - MCH6421-TL-E - 803947-MCH6421-TL-E - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - MCH6421-TL-E
803947-MCH6421-TL-E
FETs - Single - MCH6421-TL-E 803947-MCH6421-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 803947-MCH6421-TL-E Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20V Supplier Device Package: 6-MCPH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Temperature Range - Operating: 150°C Manufacturer Package: 6-SMD, Flat Leads Power Dissipation (Maximum): 1.5W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 38mOhm at 2A, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 5.1nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 410pF at 10V Current - Continuous Drain (Id) at 25°C: 5.5A Vgs(th) (Maximum) at Id: 1.3V at 1mA Maximum Vgs: ±12V

Manufacturer: ON Semiconductor
Win Source Part Number: 803947-MCH6421-TL-E
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 6-MCPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: 150°C
Manufacturer Package: 6-SMD, Flat Leads
Power Dissipation (Maximum): 1.5W
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 38mOhm at 2A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 5.1nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 410pF at 10V
Current - Continuous Drain (Id) at 25°C: 5.5A
Vgs(th) (Maximum) at Id: 1.3V at 1mA
Maximum Vgs: ±12V

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Sheung Wan, Hong Kong
MOSFET NCH 1.8V DRIVE SERIES

MOSFET NCH 1.8V DRIVE SERIES

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MCH6421-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MCH6421-TL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MCH6421-TL-E
MOSFET N-CH 20V 5.5A 6MCPH

MOSFET N-CH 20V 5.5A 6MCPH

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MCH6421-TL-EOSTR-ND 803947-MCH6421-TL-E MCH6421-TL-E MCH6421-TL-E
Product Name Single FETs, MOSFETs FETs - Single - MCH6421-TL-E MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type 6-SMD, Flat Leads SOT3 6-SMD, Flat Leads
QG 5.1 nC
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