onsemi Bipolar Transistor Arrays MC1413BDG

Description
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC
  • Bipolar Transistor Arrays - MC1413BDGOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Arrays - MC1413BDG - 074464-MC1413BDG - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MC1413BDG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 18726106 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC
Request a Quote Datasheet

Suppliers

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Product
Description
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Bipolar Transistor Arrays - MC1413BDGOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
MC1413BDGOS-ND
Bipolar Transistor Arrays MC1413BDGOS-ND
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - MC1413BDG - 074464-MC1413BDG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - MC1413BDG
074464-MC1413BDG
TRANSISTORS - Transistors (BJT) - Arrays - MC1413BDG 074464-MC1413BDG
Manufacturer: ON Semiconductor Win Source Part Number: 074464-MC1413BDG Packaging: Tube/Rail Mounting: SMD (SMT) Transistor Polarity: 7 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-SOIC Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Alternative Parts (Cross-Reference): ULN2004D1013TR; ULQ2004A; MC1413BDR2; Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 074464-MC1413BDG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Transistor Polarity: 7 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-SOIC
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Alternative Parts (Cross-Reference): ULN2004D1013TR; ULQ2004A; MC1413BDR2;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MC1413BDG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MC1413BDG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MC1413BDG
TRANS 7NPN DARL 50V 0.5A 16SO

TRANS 7NPN DARL 50V 0.5A 16SO

Supplier's Site
Transistor - 18726106 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
18726106
Transistor 18726106
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.5A I(C), 50V V(BR)CEO, 7-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, SOIC-16. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.5A I(C), 50V V(BR)CEO, 7-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, SOIC-16. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Transistors Transistors Bipolar RF Transistors RF Transistors
Product Number MC1413BDGOS-ND 074464-MC1413BDG MC1413BDG 18726106
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - MC1413BDG Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor
Polarity NPN NPN; 7 NPN Darlington
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