onsemi Transistor, Photo, 940Nm, To-18-3; Wavelength Typ Onsemi L14G3

The Transistor, Photo, 940Nm, TO-18-3 is a silicon phototransistor designed for applications requiring light detection at a typical wavelength of 940 nm. It features a hermetically sealed TO-18 package, ensuring durability and reliability in various environments. The device operates within a temperature range of -65¬8C to +125¬8C and has a maximum power dissipation of 300 mW at an ambient temperature of 25¬8C, which can be derated at higher temperatures. The phototransistor exhibits a narrow reception angle of approximately 10 degrees, making it suitable for focused light detection applications. It has a collector-emitter breakdown voltage of 45 V and an emitter-base breakdown voltage of 5 V. The on-state collector current varies by model, with the L14G1 allowing up to 1.0 mA, L14G2 up to 0.5 mA, and L14G3 up to 2.0 mA under specified conditions. The turn-on and turn-off times are approximately 8 ¬µs and 7 ¬µs, respectively, indicating suitable switching performance for various electronic applications. This product is RoHS compliant, making it suitable for environmentally conscious designs.