NPN epitaxial silicon Darlington transistor in TO-92 package, with a collector-emitter voltage rating of 60 V, collector current of 500 mA, and collector power dissipation of 625 mW. The device has a minimum DC current gain of 10,000 at 10 mA collector current, a collector-emitter saturation voltage of 1.5 V at 100 mA collector current, and a base-emitter on voltage of 2 V. Junction temperature range is -55°C to 150°C. Physical dimensions follow TO-92 package standards.
Small Signal Bipolar Transistor, 0.5A, NPN, TO-92
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | KSP27TA |
| Polarity | NPN |
