onsemi TRANSISTORS - RF Transistors (BJT) - KSC2755OMTF KSC2755OMTF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070489-KSC2755OMTF Packaging: Reel - TR Mounting: SMD (SMT) Gain: 20dB to 23dB Frequency - Transition: 600MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.3dB @ 200MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 20mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Typical Gain (hFE) (Min): 90 @ 3mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070489-KSC2755OMTF Packaging: Reel - TR Mounting: SMD (SMT) Gain: 20dB to 23dB Frequency - Transition: 600MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.3dB @ 200MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 20mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Typical Gain (hFE) (Min): 90 @ 3mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - KSC2755OMTF - 070489-KSC2755OMTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - KSC2755OMTF
070489-KSC2755OMTF
TRANSISTORS - RF Transistors (BJT) - KSC2755OMTF 070489-KSC2755OMTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070489-KSC2755OMTF Packaging: Reel - TR Mounting: SMD (SMT) Gain: 20dB to 23dB Frequency - Transition: 600MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.3dB @ 200MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 20mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Typical Gain (hFE) (Min): 90 @ 3mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070489-KSC2755OMTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 20dB to 23dB
Frequency - Transition: 600MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.3dB @ 200MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 20mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Typical Gain (hFE) (Min): 90 @ 3mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
30V 20mA 600MHz SOT23 Bipolar Transistor
283-KSC2755OMTF
30V 20mA 600MHz SOT23 Bipolar Transistor 283-KSC2755OMTF
NPN BJT Transistor, 30V, 20mA, 600MHz, SOT23-3 Product overview: KSC2755OMTF from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20mA, 600MHz, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 20mA, 600MHz, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-KSC2755OMTF can be used for catalog matching and distributor lookup.

NPN BJT Transistor, 30V, 20mA, 600MHz, SOT23-3 Product overview: KSC2755OMTF from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20mA, 600MHz, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 20mA, 600MHz, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-KSC2755OMTF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - KSC2755OMTF-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
KSC2755OMTF-ND
Bipolar RF Transistors KSC2755OMTF-ND
RF Transistor NPN 30V 20mA 600MHz 150mW Surface Mount SOT-23-3

RF Transistor NPN 30V 20mA 600MHz 150mW Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC2755OMTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSC2755OMTF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSC2755OMTF
RF TRANS NPN 30V 600MHZ SOT23-3

RF TRANS NPN 30V 600MHZ SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 070489-KSC2755OMTF 283-KSC2755OMTF KSC2755OMTF-ND KSC2755OMTF
Product Name TRANSISTORS - RF Transistors (BJT) - KSC2755OMTF 30V 20mA 600MHz SOT23 Bipolar Transistor Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
TJ 150 C (302 F) -55 C (-67 F)
Power Gain 90 dB
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