The JANTXV2N2907A is a PNP silicon bipolar junction transistor designed for small-signal switching applications, packaged in a TO-18 metal can with case style 206AA. It has a maximum collector-emitter voltage of -60 V, a continuous collector current of -600 mA, and a total power dissipation of 500 mW at 25°C ambient temperature. The device operates over a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/291 qualification standards. Thermal resistance from junction to ambient is 325°C/W. Its minimum DC current gain is 100 at 150 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of -1.6 V at -500 mA collector and -50 mA base current.
Win Source Part Number: 1194068-JANTXV2N2907
Category: Discrete Semiconductor Products>Transistors
Series: Military, MIL-PRF-19500/291
Package: Bulk
Standard Package: 1
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Temperature Range - Operating: -65°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: ONSONSJANTXV2N2907A,
Base Product Number: 2N2907
RoHS Status: Not applicable
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 1194068-JANTXV2N2907A |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single |
| Polarity | PNP |
| Package Type | SOT3 |
| IC(max) | 600 milliamps |
