onsemi JFETs J271

Description
JFET P-Channel 30V 350mW Through Hole TO-92-3
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Description
JFET P-Channel 30V 350mW Through Hole TO-92-3
Request a Quote
Datasheet
Datasheet Summary
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The J271 is a P-channel JFET designed for low-level analog switching in sample and hold circuits and chopper-stabilized amplifiers. It is packaged in a TO-92 case with dimensions of 4.58 mm height, 2.29 mm lead spacing, and 3.60 mm body width. The device has a drain-gate voltage rating of 30 V and a maximum power dissipation of 350 mW. Operating and storage junction temperatures range from -55 °C to 150 °C. Thermal resistance from junction to ambient is 357 °C/W. The package complies with the TO-92 standard.

Datasheet Summary
Powered by GS/AI

The J271 is a P-channel JFET designed for low-level analog switching in sample and hold circuits and chopper-stabilized amplifiers. It is packaged in a TO-92 case with dimensions of 4.58 mm height, 2.29 mm lead spacing, and 3.60 mm body width. The device has a drain-gate voltage rating of 30 V and a maximum power dissipation of 350 mW. Operating and storage junction temperatures range from -55 °C to 150 °C. Thermal resistance from junction to ambient is 357 °C/W. The package complies with the TO-92 standard.

Suppliers

Company
Product
Description
Supplier Links
JFETs - J271-ND - DigiKey
Thief River Falls, MN, United States
JFETs
J271-ND
JFETs J271-ND
JFET P-Channel 30V 350mW Through Hole TO-92-3

JFET P-Channel 30V 350mW Through Hole TO-92-3

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number J271-ND
Product Name JFETs
Polarity P-Channel
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