Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 018109-ISL9V3040S3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Logic
Gate Charge: 17nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-263AB
Maximum Current Collector: 21A
VCEO Maximum Collector-Emitter Breakdown Voltage: 430V
Maximum Power Dissipation: 150W
Collector-emitter saturation voltage(Max): 1.6V @ 4V, 6A
Turn-on and Turn-off delay time: -/4.8μs
Testing Conditions: 300V, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 800
IGBT 430V 21A 150W Surface Mount D²PAK (TO-263)
IGBT 430V 21A 150W Surface Mount D²PAK (TO-263)
IGBT 430V 21A 150W Surface Mount D²PAK (TO-263)
EcoSPARK 360V 21A Ignition IGBT D2PAK-2
EcoSPARK 360V 21A Ignition IGBT D2PAK-2
EcoSPARK 360V 21A Ignition IGBT D2PAK-2
IGBT, SINGLE, 400V, 21A, TO-263AB-3; Continuous Collector Current:21A; Collector Emitter Saturation Voltage:1.25V; Power Dissipation:150W; Collector Emitter Voltage Max:400V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
IGBT 430V 21A TO263AB
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 018109-ISL9V3040S3ST | ISL9V3040S3ST | ISL9V3040S3STCT-ND | ISL9V3040S3STTR-ND | 8629353P | 8629353 | 31Y2097 | ISL9V3040S3ST |
| Product Name | IGBTs - Single - ISL9V3040S3ST | Single IGBTs | Single IGBTs | Single IGBTs | IGBTs | IGBTs | Igbt, Single, 400V, 21A, To-263Ab-3; Continuous Collector Current Onsemi | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 1.6 volts | |||||||
| PD | 150000 milliwatts | 150000 milliwatts | ||||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ? to 175 C (? to 347 F) | -40 to 175 C (-40 to 347 F) |
